Ace Strong has introduced the latest product AIX G5+ to provide 5x200 mm silicon-based GaN growth equipment for its AIX G5 planetary reactor platform. Based on a customer-centric development program, Acetron's R&D lab developed the technology and designed and manufactured the product, including specially designed reactor hardware and processes. The product is now available as part of the AIX G5 series, so all existing G5 systems can be upgraded to this new device. Ai Siqiang has revealed the details of G5+ to some key customers.
“Silicon gallium nitride technology is a hot topic for today's MOCVD users and manufacturers.†Dr. Rainer Beccard, vice president of marketing at Axon, said, “It is the technology of choice for many emerging power electronics market segments, while at the same time being low cost in the future. High-performance, high-brightness LED products have good prospects for manufacturing. Wafer size and materials are critical to the cost-effectiveness of the manufacturing process, so the transition to 200 mm standard silicon wafers will be future development with its unique cost advantage. a reasonable trend."
“Ai Siqiang firmly believes that uniformity and yield are the key factors for success in the process of 200 mm silicon GaN. Therefore, we have carried out a special R&D program.†Ai Siqiang Vice President and Power Electronics Project Manager Dr. Frank Wischmeyer added, “First, we have undergone repeated numerical simulations to design new basic components that are compatible with the existing AIX G5 reactor platform and are capable of meeting the unique process performance of the 5x200 mm process.†And ultimately The extremely stable process flow provides more uniform material characteristics and higher device yields than any Other MOCVD platform, while also having a 5x200 mm wafer throughput.
Initial feedback from customers also confirmed the great success of this technology development. Many customers have pointed out that all 5x200 mm wafers have a fully rotationally symmetric uniform shape, a standard thickness of silicon-based substrates, and tightly controlled wafer curvature, all in line with their required silicon production needs. Dr. Wischmeyer said: "This uniform production capacity has always been the unique advantage of the Acetron planetary reactor? Technology can now be successfully applied to the production of 200 mm silicon-based GaN wafers. â€
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