Recently, the team of the Advanced Materials and Structure Analysis Laboratory of the Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, and Beijing Tianke Heda Blu-ray Semiconductor Co., Ltd. successfully developed a 6-inch silicon carbide (SiC) single. Crystal substrate. It is reported that silicon carbide is an ideal substrate for manufacturing high-brightness LEDs, power electronic power devices, and RF microwave devices.
The picture shows a 6-inch silicon carbide single crystal substrate in front of a chart demonstrating the physical principles of silicon carbide.
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