With the global energy shortage and environmental pollution, LED has a wide application space for its energy saving and environmental protection characteristics. The application of LED lighting products in the field of lighting is attracting the attention of the world. In general, whether the LED lamp works stably, the quality is good or bad, and the heat dissipation of the lamp body itself is very important. At present, the heat dissipation of the high-brightness LED lamp on the market often uses natural heat dissipation, and the effect is not satisfactory. The LED light source is composed of LED, heat dissipation structure, driver and lens. Therefore, heat dissipation is also an important part. If the LED does not dissipate heat well, its life will be affected.
1, heat treatment is the main problem in high-brightness LED applications
Since the p-type doping of the group III nitride is limited by the solubility of the Mg acceptor and the higher starting energy of the hole, heat is particularly easily generated in the p-type region, and this heat must be dissipated through the entire structure on the heat sink; The heat dissipation path of the LED device is mainly heat conduction and heat convection; the extremely low thermal conductivity of the Sapphire substrate material leads to an increase in the thermal resistance of the device, which causes a serious self-heating effect and has a devastating effect on the performance and reliability of the device.
2, the effect of heat on high-brightness LED heat is concentrated in a small-sized wafer, the temperature of the wafer rises, causing non-uniform distribution of thermal stress, wafer luminous efficiency and fluorescent powder lasing efficiency; when the temperature exceeds a certain value The device failure rate increases exponentially. Statistics show that for every 2 °C rise in component temperature, reliability is reduced by 10%. When multiple LEDs are densely arranged to form a white light illumination system, the heat dissipation problem is more serious. Addressing thermal management issues has become a prerequisite for high-brightness LED applications.
3, the relationship between wafer size and heat dissipation
The most straightforward way to increase the brightness of a power LED is to increase the input power. To prevent the saturation of the active layer, the size of the pn junction must be increased accordingly; increasing the input power necessarily increases the junction temperature, which in turn reduces the quantum efficiency. The increase in single-tube power depends on the ability of the device to derive heat from the pn junction, and to increase the size of the wafer separately, while maintaining the current wafer material, structure, packaging process, constant current density on the wafer, and equivalent heat dissipation conditions. The temperature will continue to rise. (small soup)
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