Guangzhou Engineering and Technology Vocational College: Industrial Robotics

Recently, this reporter from the Guangzhou Institute of Technology has learned, mechanical and electrical engineering school specializing in robotics declared "Education Cooperation, Ministry of Education robotics projects - industrial robot applications Personnel Training Center" successfully approved project. It is reported that the “Industrial Robot Application Talent Training Center” project submitted by 100 vocational colleges nationwide has been approved.

The reporter learned that the project is a vocational education project in the field of industrial robots jointly implemented by the Ministry of Education and China Airlines, ABB and Xinshida. After the project is established, the Guangzhou Engineering and Technology Institute will receive a training equipment and software platform worth 3 million yuan. And teaching resources such as teacher training and technical support.

Industrial robotics has become a hot professional in recent years. The relevant person in charge of the Guangzhou Engineering and Technology Vocational College introduced that the industrial robot profession started earlier. In 2014, it undertook the construction of the national teaching resource library subproject, and applied for the Guangzhou Advanced Manufacturing Technology Specialty College; in 2015, the school's robotics major Became the first batch of brand majors in Guangdong Province.

Fast Recovery Stud Diode

Fast Recovery Diode (FRD) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in switching power supplies, PWM pulse width modulators, inverters and other electronic circuits as high-frequency rectifier diodes. Free-wheeling or damper diodes are used. The internal structure of the fast recovery diode is different from that of an ordinary PN junction diode. It belongs to a PIN junction diode, that is, a base region I is added between the P-type silicon material and the N-type silicon material to form a PIN silicon wafer. Since the base area is thin and the reverse recovery charge is small, the fast recovery diode has a short reverse recovery time, a low forward voltage drop, and a high reverse breakdown voltage (withstanding voltage).

Fast Recovery Stud Diode

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