In the morning news of September 29, Hu Shan, deputy chief engineer of the Communications Information Institute of the Telecommunication Research Institute of the Ministry of Industry and Information Technology, said at the "New Generation Broadband Wireless Mobile Communication Development Forum" held recently that as of August 2012, LTE Global users accounted for only 0.5%, but it clearly exceeded the initial development level of 3G commercial use.
"LTE only achieved the scale of 20 million users in three and a half years. This speed is far faster than 2G and 3G levels." Hu Shan said.
In Hu Shan's view, the rapid maturity of LTE and the rapid maturity of system equipment and terminals are both in Hong Kong. The first is the system equipment, "The main feature of the system equipment is that multi-standard common platform base stations have become a reality in the industry. Now many base stations can support 2G, 3G and LTE multi-standard base stations at the same time, and the existing base stations can also carry out LTE. deploy."
Terminals, especially smart terminals, are very important factors in the development of LTE. "Because LTE has very high requirements on terminal chip processing capabilities and power consumption control capabilities compared to 3G technology, it is very demanding on the terminal chip in terms of materials and processes."
Nowadays, the process capability of 40-nanometer chips is generally adopted, which can support the use of data card terminals. But now with 40nm chip technology, power consumption is still relatively large. Now there is the possibility of a 28-nanometer chip, which will effectively solve the problem of power consumption.
However, at this stage, only Qualcomm can provide commercial products in small batches. The price of commercial products is now around US $ 17,18. It is difficult to achieve large-scale commercialization at this price. It may be possible to achieve large-scale commercialization if it is reduced to US $ 7,8. Annual mass production will occur.
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